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      一種補(bǔ)償閾值電壓和遷移率變化的像素電路設(shè)計(jì)

      2019-12-05 08:35:54黃勇關(guān)肖飛張立文李月華王新林何紅宇
      關(guān)鍵詞:閾值電壓遷移率

      黃勇 關(guān)肖飛 張立文 李月華 王新林 何紅宇

      摘 要:本文通過對數(shù)據(jù)輸入階段的時序進(jìn)行調(diào)整,改進(jìn)了一種適用于低溫多晶硅薄膜晶體管的電壓編程型像素電路,用來得到穩(wěn)定的驅(qū)動電流。該像素電路由4個開關(guān)薄膜晶體管,1個驅(qū)動薄膜晶體管,2個電容和2條控制線組成。理論分析表明,該電路不僅能補(bǔ)償驅(qū)動管閾值電壓的變化,而且能補(bǔ)償驅(qū)動管遷移率的變化。仿真結(jié)果表明,驅(qū)動管的閾值電壓變化±0.5 V時,驅(qū)動電流變化約為9%,驅(qū)動管的遷移率變化±30%時,驅(qū)動電流變化約為6%,因此,本電路達(dá)到了穩(wěn)定驅(qū)動電流的效果。

      關(guān)鍵詞: 像素電路;多晶硅薄膜晶體管;閾值電壓;遷移率

      【Abstract】 A voltage-programming pixel circuit suitable for low-temperature polysilicon thin film transistors is improved to obtain the stable driving current by adjusting the timing in the data input stage. The pixel circuit consists of four switching thin film transistors, one driving thin film transistor, two capacitors, and two control lines. Theoretical analysis shows that the circuit not only can compensate the threshold voltage variation of the driving transistor, but also can compensate the mobility variation of the driving transistor. The simulation results show that, the driving current variation is about 9% when the threshold voltage variation of the driving transistor is ±0.5 V, and the variation of the driving current is about 6% when the mobility variation of the driving transistor is ±30%. Thus, the present circuit can achieve the stable driving current.

      【Key words】 ?pixel circuit; polysilicon thin film transistor; threshold voltage; mobility

      0 引 言

      在高分辨率、中小尺寸顯示技術(shù)中,低溫多晶硅薄膜晶體管得到了廣泛的應(yīng)用。這種晶體管具有遷移率高、驅(qū)動能力強(qiáng)等優(yōu)點(diǎn)[1]。但是,在像素電路矩陣中,由于受制造工藝的局限和長時間工作時應(yīng)力的影響,晶體管的電學(xué)特性會表現(xiàn)出不均勻性[2]。這種不均勻性一般表現(xiàn)為驅(qū)動管閾值電壓和遷移率的變化,因此,需要設(shè)計(jì)合適的像素電路進(jìn)行補(bǔ)償。

      補(bǔ)償驅(qū)動管閾值電壓和遷移率變化的像素電路分為電流編程型和電壓編程型[3]。

      Lee等人[4]提出了一種電流編程型像素電路,該電路時序簡單,但電流編程型像素電路充放電時間較長,可能會導(dǎo)致數(shù)據(jù)寫入不充分,影響正常顯示。

      電壓編程型像素電路具有充放電時間短的特點(diǎn),因此,得到了業(yè)界的高度重視。文獻(xiàn)[5-7]提出了補(bǔ)償閾值電壓和遷移率變化的像素電路,這些電路具有結(jié)構(gòu)簡單的優(yōu)點(diǎn),但需要增加遷移率補(bǔ)償階段,導(dǎo)致時序比較復(fù)雜。因而,人們提出了多種不必增加遷移率補(bǔ)償階段的方法:文獻(xiàn)[8-12]把遷移率的變化轉(zhuǎn)化為柵極電位或源級電位的變化;Yamamoto等人[13]調(diào)整閾值電壓提取階段的時序;Liao等人[14]構(gòu)造驅(qū)動管的鏡像;Yi等人[15]引入OLED陽極電壓;Lin等人[16]調(diào)整數(shù)據(jù)輸入階段的時序。上述方法在補(bǔ)償閾值電壓和遷移率的變化方面都有自己的特色。

      研究注意到,Yao等人[17]提出了一種補(bǔ)償閾值電壓變化的像素電路,但沒有涉及遷移率變化的問題,有待進(jìn)一步完善。

      本文對數(shù)據(jù)輸入階段的時序進(jìn)行調(diào)整,在Yao電路的基礎(chǔ)上[17],實(shí)現(xiàn)了對閾值電壓和遷移率變化的補(bǔ)償。理論分析和仿真驗(yàn)證結(jié)果表明,本電路能夠穩(wěn)定驅(qū)動電流,達(dá)到了補(bǔ)償效果。

      1 像素電路結(jié)構(gòu)和工作原理

      1.1 像素電路結(jié)構(gòu)

      如圖1(a)所示,本像素電路由1個驅(qū)動薄膜晶體管(TD),4個開關(guān)薄膜晶體管(T1~T4),其中T1~T3為P管,T4為N管,2個電容器(C1,C2)和2條控制線(SCAN1,SCAN2)組成。工作時序如圖1(b)所示,可分為3個階段,分別是:(1)補(bǔ)償階段;(2)數(shù)據(jù)輸入階段;(3)發(fā)光階段。

      3 結(jié)束語

      本文在數(shù)據(jù)輸入階段,通過對電路時序進(jìn)行調(diào)整,改進(jìn)了一種電壓編程型像素電路,理論分析了補(bǔ)償閾值電壓和遷移率變化的原理,仿真驗(yàn)證結(jié)果表明,本電路能有效補(bǔ)償閾值電壓和遷移率的變化,達(dá)到了穩(wěn)定驅(qū)動電流的效果。

      參考文獻(xiàn)

      [1]NAM W J, LEE J H, KIM C Y, et al. High-aperture pixel design employing VDD line elimination for active matrix organic light emitting diode display [J]. Japanese Journal of Applied Physics, 2006, 45(4): 2433-2436.

      [2]JUNG S H, NAM W J, HAN M K. A new voltage-modulated AMOED pixel design compensating for threshold voltage variation in Poly-Si TFTs [J]. IEEE Electron Device Letters, 2004, 33(10): 690-692.

      [3]DAWSON R M A , SHEN Z , FURST D A , et al. The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays [C] // International Electron Devices Meeting. San Francisco, USA: IEDM, 1998: 32.6.1-32.6.4.

      [4]LEE J H , NAM W J, JUNG S H , et al. A new current scaling pixel circuit for AMOLED [J]. IEEE Electron Device Letters, 2004, 25(5): 280-282.

      [5]PARK Y J, JUNG M H, PARK S H, et al. Voltage-programming-based pixel circuit to compensate for threshold voltage and mobility using natural capacitance of organic light-emitting diode [J]. Japanese Journal of Applied Physics, 2010, 49(3): 03CD01-1-03CD01-5.

      [6]ONOYAMA Y, YAMASHITA J, KITAGAWA H, et al. 0.5-inch XGA Micro-OLED display on a silicon backplane with high-definition technologies [J]. Sid Symposium Digest of Technical Papers, 2012, 43(1): 950-953.

      [7]KANG C K, CHOI B D. A pixel circuit for AMOLED displays compensating for threshold voltage and mobility variation [C] // International Display Workshops 2013. Sapporo, Japan: IDW, 2013 :433-436.

      [8]SONG S J, NAM H. In pixel mobility compensation scheme for AMOLED pixel circuits [J]. Journal of Display Technology, 2015, 11(2): 209-213.

      [9]KIM Y, KANICKI J, LEE H. An a-InGaZnO TFT pixel circuit compensating threshold voltage and mobility variations in AMOLEDs [J]. Journal of Display Technology, 2014, 10(5): 402-406.

      [10]LIAO Zhiqiang, LIN Hesheng, LIU Binjie, et al. Mobility variation and threshold voltage shift immunized amorphous-indium-gallium-zinc-oxide pixel circuit [C] // IEEE International Conference on Electron Devices and Solid-State Circuits. HongKong, China: EDSSC, 2016: 255-258.

      [11]YI Shuiping, WU Jixiang, LIAO Congwei, et al. An a-IGZO TFT AMOLED pixel circuit to compensate threshold voltage and mobility variations [C] // International Workshop on Active-Matrix Flat Panel Displays and Devices 2018. Kyoto, Japan: IEEE, 2018: 1-4.

      [12]LIN C L, HUNG C C, CHEN P S, et al. New voltage-programmed AMOLED pixel circuit to compensate for nonuniform electrical characteristics of LTPS TFTs and voltage drop in power line [J]. IEEE Transactions on Electron Devices, 2014, 61(7): 2454-2458.

      [13]YAMAMOTO T,YAMASHITA J,YUMOTO A,et al. Novel pixel circuit and driving method of AM-OLED for mobile application pixel circuit for threshold voltage and mobility compensation with? compensation with IGZO TFTs [C] // Proc. SPIE 6333, Organic Light Emitting Materials and Devices X, 633309. California, United States: OLEMD, 2006: 633309-1-633309-8.

      [14]LIAO C, DENG W, SONG D, et al. Mirrored OLED pixel circuit for threshold voltage and mobility compensation with IGZO TFTs [J]. Microelectronics Journal, 2015, 46(10): 923-927.

      [15]YI Shuiping, HUO Xinxin, LIAO Congwei, et al. An a-IGZO TFT pixel circuit for AMOLED display systems with compensation for mobility and threshold voltage variations [C] // 2018 IEEE International Conference on Electron Devices and Solid State Circuits. Shenzhen, China: EDSSC,2018: 1-2.

      [16]LIN C L, LAI P C, DENG M Y. New pixel circuit to improve current uniformity for high-resolution AMOLED displays [J]. SID Symposium Digest of Technical Papers, 2015, 46(1): 1297-1300.

      [17]YAO Rihui, ZHANG Lirong, ZHOU Lei, et al. A new compensation pixel circuit with all-p-type TFTs for AMOLED displays [J]. Displays, 2013, 34(3): 187-191.

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